Перегляд за автором "Klad’ko, V.P."

Сортувати за: Порядок: Результатів:

  • Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon 
    Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals 
    Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kyslovskyy, Ye.M.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.; Skakunova, E.S.; Lizunov, V.V.; Kochelab, E.V.; Fodchuk, I.M.; Klad’ko, V.P. (Металлофизика и новейшие технологии, 2016)
    A short review of basic principles and limitations in obtaining the analytical expressions for the coherent and diffuse scattering intensities measured by the triple-crystal diffractometer (TCD) are presented. Explicit ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃ Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences ...
  • Optical and acoustical phonon modes in superlattices with SiGe QDs 
    Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Recrystallization processes in screen-printed CdS films 
    Klad’ko, V.P.; Lytvyn, O.S.; Lytvyn, P.M.; Osipenok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F.; Korchevoy, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Kinetics of recrystallization in screen-printed polycrystalline CdS films has been investigated by X-ray structure analysis and optical microscopy. The relation between the crystallite size, crystallite orientation and the ...
  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...